题目：Solution-Processed Indium Oxide Based Thin-Film Transistors
时间：2015.10.21（周三）下午3:30
地点：光电工程学院346会议室
报告人：许望颖 博士
主持人：彭争春 教授
Abstract
Oxide thin-film transistors (TFTs) have attracted considerable attention over
the past decade due to their high carrier mobility and excellent
uniformity.However,mostof theseoxideTFTsareusuallyfabricated
usingcostlyvacuum-basedtechniques.Recently, the solution processes have been
developed due to the possibility of low-cost and large-area fabrication.In this
presentation, adetailed and systematic study of solution-processed oxide thin
films and TFTs will be given. Our study represents a significant step towards
the development of low-cost, low-temperature, and low voltage driven green oxide
electronics.
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报告人简介：
许望颖，香港中文大学电子工程系博士。2009年毕业于浙江大学材料系，获学士学位；2012年毕业于中国科学院宁波材料技术与工程研究所，获硕士学位；2015年毕业于香港中文大学电子工程系，获博士学位。博士毕业之后，加入纳米及先进材料研发院有限公司（香港），担任研发工程师。长期从事半导体材料与器件的研发工作，目前在ACS
Appl. Mater. Interfaces, J. Mater. Chem. C, Appl. Phys. Lett.,J. Phys. D: Appl.
Phys等期刊发表SCI论文十余篇。
