As a promising alternative for next-generation memory, memristors provide several useful features such as high density, nonvolatility, low power, and good scalability as compared with conventional CMOS-based memories. In this brief, a voltagecontrolled thresholdmemristive model is proposed, which is based on experimental data of memristive devices. Moreover, the model is more suitable for the design of memristor-based synaptic circuits as compared with other memristive models. The effects of memristance variations are considered in the proposed model to evaluate the behavior of memristive synapses within memristorbased neural networks.