报告内容简介:
This seminar will report two key technologies developed for the silicon power semiconductor devices, especially on the power MOSFET-based synchronous rectifiers and the superjunction unipolar technologies. Both their design concepts and process details will be highlighted. Laboratory measurement results will also be presented for discussion.
Furthermore, the wide bandgap AlGaN/GaN heterojunction HEMT devices and their process technologies will also be discussed in the seminar. This includes both the normally-on and normally-off devices, their gate engineering & fluorination processes and the evaluation on their high temperature behaviours.
报告时间：2016年7月29日 下午2:30-3:30
报告地点：材料学院F220
欢迎有兴趣的师生前来参加！
深圳大学材料学院
2016年6月17日
